Electronic Structure Shift of Deep Nanoscale Silicon by SiO${}_2$- vs. Si${}_3$N${}_4$-Embedding as Alternative to Impurity Doping

Dirk König, Noël Wilck, Daniel Hiller +7

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…