169 citations · 755 across the 12 of their papers we have counts for
10 papers · 1 filter
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
Extraordinary water adsorption characteristics of graphene oxide
B. Lian, S. De Luca, Y. You +6
The laminated structure of graphene oxide (GO) confers unique interactions with water molecules which may be utilised in a range of applications that require materials with tuneabl…
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Dirk König, Daniel Hiller, Sebastian Gutsch +2
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omniprese…
On the mechanism of gas adsorption for pristine, defective and functionalized graphene
Y. You, J. Deng, X. Tan +5
Defect is no longer deemed an adverse aspect of graphene. Contrarily, it can pave ways of extending applicability of graphene. Here, we discuss the effects of three types of defect…
Tetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall Insulator
Liangzhi Kou, Xin Tan, Yandong Ma +6
Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large n…
New Family of Quantum Spin Hall Insulators in Two-dimensional Transition-Metal Halide with Large Nontrivial Band Gaps
Liujiang Zhou, Liangzhi Kou, Yan Sun +6
Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently reali…