activity
20152021
most citedEngineering inter-qubit exchange coupling between donor bound electrons in silicon

58 citations · 155 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2021

Valley population of donor states in highly strained silicon

B. Voisin, K. S. H. Ng, J. Salfi +13

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…

quant-ph2019★ 4 cited

Quantum-Kit: Simulating Shor's Factorization of 24-Bit Number on Desktop

Archana Tankasala, Hesameddin Ilatikhameneh

Quantum-Kit is a graphical desktop application for quantum circuit simulations. Its powerful, memory-efficient computational engine enables large-scale simulations on a desktop. Th…

cond-mat.mes-hall2017★ 14 cited

Valley filtering and spatial maps of coupling between silicon donors and quantum dots

J. Salfi, B. Voisin, A. Tankasala +6

Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the…

cond-mat.mes-hall2017★ 24 cited

Two-electron states of a group V donor in silicon from atomistic full configuration interaction

Archana Tankasala, Joseph Salfi, Juanita Bocquel +7

Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight…

cond-mat.mtrl-sci2016★ 55 cited

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Muhammad Usman, Juanita Bocquel, Joe Salfi +6

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…

cond-mat.mes-hall2015★ 58 cited

Engineering inter-qubit exchange coupling between donor bound electrons in silicon

Yu E. Wang, Archana Tankasala, Lloyd C. L. Hollenberg +3

We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qub…