activity
20152020
most citedEngineering inter-qubit exchange coupling between donor bound electrons in silicon

58 citations · 189 across the 8 of their papers we have counts for

collaborators

8 papers

quant-ph2020★ 40 cited

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Kok Wai Chan, Harshad Sahasrabudhe, Wister Huang +12

Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is co…

cond-mat.mes-hall2018★ 48 cited

Addressable electron spin resonance using donors and donor molecules in silicon

Samuel J. Hile, Lukas Fricke, Matthew G. House +8

Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, ind…

cond-mat.mes-hall2017★ 2 cited

All-electrical control of donor-bound electron spin qubits in silicon

Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a t…

cond-mat.mes-hall2016

Characterizing Si:P quantum dot qubits with spin resonance techniques

Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2

Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunabil…

cond-mat.mes-hall2016★ 2 cited

High-Performance Complementary III-V Tunnel FETs with Strain Engineering

Jun Z. Huang, Yu Wang, Pengyu Long +3

Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…

cond-mat.mes-hall2015

Bulk and sub-surface donor bound excitons in silicon under electric fields

Rajib Rahman, Jan Verduijn, Yu Wang +4

The electronic structure of the three-particle donor bound exciton (DX) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approx…