58 citations · 189 across the 8 of their papers we have counts for
3 papers · 1 filter
Bulk and sub-surface donor bound excitons in silicon under electric fields
Rajib Rahman, Jan Verduijn, Yu Wang +4
The electronic structure of the three-particle donor bound exciton (DX) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approx…
Engineering inter-qubit exchange coupling between donor bound electrons in silicon
Yu E. Wang, Archana Tankasala, Lloyd C. L. Hollenberg +3
We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qub…
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan +5
An atomistic method of calculating the spin-lattice relaxation times () is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes int…