58 citations · 189 across the 8 of their papers we have counts for
7 papers · 1 filter
Addressable electron spin resonance using donors and donor molecules in silicon
Samuel J. Hile, Lukas Fricke, Matthew G. House +8
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, ind…
All-electrical control of donor-bound electron spin qubits in silicon
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a t…
Characterizing Si:P quantum dot qubits with spin resonance techniques
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunabil…
High-Performance Complementary III-V Tunnel FETs with Strain Engineering
Jun Z. Huang, Yu Wang, Pengyu Long +3
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…
Bulk and sub-surface donor bound excitons in silicon under electric fields
Rajib Rahman, Jan Verduijn, Yu Wang +4
The electronic structure of the three-particle donor bound exciton (DX) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approx…
Engineering inter-qubit exchange coupling between donor bound electrons in silicon
Yu E. Wang, Archana Tankasala, Lloyd C. L. Hollenberg +3
We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qub…