Low Temperature Relaxation of Donor Bound Electron Spins in ${}^{28}$Si:P

Abstract

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped ${}^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The ${}^{28}$Si:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T${}^9$ dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T${}^7$ dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the ${}^{28}$Si:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of $\Gamma$ as predicted by theory.

arXiv comment5 pages, 3 figures

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