Exchange coupling between silicon donors: the crucial role of the central cell and mass anisotropy
arXiv:1312.4739 · doi:10.1103/PhysRevB.89.235306
Abstract
Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on controlling two qubit interactions has been slower. One reason for this is that the inter donor exchange coupling has been predicted to oscillate with separation, making it hard to estimate in device designs. We present a multivalley effective mass theory of a donor pair in silicon, including both a central cell potential and the effective mass anisotropy intrinsic in the Si conduction band. We are able to accurately describe the single donor properties of valley-orbit coupling and the spatial extent of donor wave functions, highlighting the importance of fitting measured values of hyperfine coupling and the orbital energy of the levels. Ours is a simple framework that can be applied flexibly to a range of experimental scenarios, but it is nonetheless able to provide fast and reliable predictions. We use it to estimate the exchange coupling between two donor electrons and we find a smoothing of its expected oscillations, and predict a monotonic dependence on separation if two donors are spaced precisely along the [100] direction.
Published version. Corrected b and B values from previous version
References in corpus (2)
Cited by in corpus (20)
- Multivalley effective mass theory simulation of donors in silicon
- Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
- Engineering inter-qubit exchange coupling between donor bound electrons in silicon
- Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
- Theory of one and two donors in Silicon
- Hyperfine Stark effect of shallow donors in silicon
- Valley interference and spin exchange at the atomic scale in silicon
- Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
- Decoherence of nuclear spins in the "frozen core" of an electron spin
- Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
- Valley filtering and spatial maps of coupling between silicon donors and quantum dots
- Statistical exchange-coupling errors and the practicality of scalable silicon donor qubits
- Theory of single and two-qubit operations with donor-bound electron spins in germanium
- Optical Control of Donor Spin Qubits in Silicon
- Quadrupolar interactions between acceptor pairs in p-doped semiconductors
- Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
- Heitler-London model for acceptor-acceptor interactions in doped semiconductors
- A Computational Workflow for Designing Silicon Donor Qubits
- Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
- Certification of spin-based quantum simulators