Theory of one and two donors in Silicon

Abstract

We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell correction and a configuration interaction account of the electron-electron correlations. We also derive insightful, yet less accurate, analytical approximations and discuss their validity and limitations -- in particular, for a donor pair, we discuss the single orbital LCAO method, the Huckel approximation and the Hubbard model. Finally we discuss the connection between these results and recent experiments on few dopant devices.

13 pages, 6 figures

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Cited by in corpus (31)

• Two-Electron Spin Correlations in Precision Placed Donors in Silicon
• Adequacy of Si:P Chains as Fermi-Hubbard Simulators
• Multivalley effective mass theory simulation of donors in silicon
• Ion Implantation for Deterministic Single Atom Devices
• Addressable electron spin resonance using donors and donor molecules in silicon
• Extended Hubbard model for mesoscopic transport in donor arrays in silicon
• Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
• Valley interference and spin exchange at the atomic scale in silicon
• STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
• Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
• Donor Wavefunctions in Si Gauged by STM Images
• Multi-valley envelope function equations and effective potentials for P impurity in silicon
• Linear and planar molecules formed by coupled P donors in silicon
• Interface effects on acceptor qubits in silicon and germanium
• Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
• Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices
• Optical Control of Donor Spin Qubits in Silicon
• Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
• 2D-3D crossover in a dense electron liquid in silicon
• Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• Anderson Localization of Electrons in Silicon Donor Chains
• 2-dimensional semiconductors pave the way towards dopant based quantum computing
• Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
• Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions
• Donors in Ge as Qubits: Establishing Physical Attributes
• Thermodynamic Effects of Single-Qubit Operations in Silicon-Based Quantum Computing
• Disordered Si:P nanostructures as switches and wires for nanodevices
• Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system