Linear and planar molecules formed by coupled P donors in silicon

Abstract

Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary geometrical configuration in silicon taking into account the valley-orbit coupling. The methodology is applied to three coupled phosphorus donors, arranged in a linear chain and in a triangle, and to six donors arranged in a regular hexagon. The results of the simulations evidence that the valley composition of the single-electron states strongly depends on the geometry of the dopant molecule and its orientation relative to the crystallographic axes of silicon. The electron binding energy of the triatomic linear molecules is larger than that of the diatomic molecule oriented along the same crystallographic axis, but the energy gap between the ground state and the first excited state is not significantly different for internuclear distances from 1.5 to 6.6 nm. Three donor atoms arranged in a triangle geometry have larger binding energies than a triatomic linear chain of dopants with the same internuclear distances. The planar donor molecules are characterized by a strong polarization in favor of the valleys oriented perpendicular to the plane of the molecule. The polarization increases with number of atoms forming the planar molecule.

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Cited by in corpus (5)

• Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions
• Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
• Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures