Hyperfine Stark effect of shallow donors in silicon

Abstract

We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz.

arXiv comment11 pages, 6 figures

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Cited by in corpus (27)

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• Multivalley effective mass theory simulation of donors in silicon
• Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
• Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
• Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
• Addressable electron spin resonance using donors and donor molecules in silicon
• Strain-induced spin resonance shifts in silicon devices
• Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
• Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
• Large Stark tuning of donor electron spin quantum bits in germanium
• Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
• Multi-valley envelope function equations and effective potentials for P impurity in silicon
• Spin relaxation and donor-acceptor recombination of Se${}^{+}$ in 28-silicon
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Linear and planar molecules formed by coupled P donors in silicon
• Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon
• Optical Control of Donor Spin Qubits in Silicon
• Quadrupolar interactions between acceptor pairs in p-doped semiconductors
• Hole-Spin-Echo Envelope Modulations
• Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
• Heitler-London model for acceptor-acceptor interactions in doped semiconductors
• Qubit guidelines for solid-state spin defects
• Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system