Spin relaxation and donor-acceptor recombination of Se${}^{+}$ in 28-silicon

Abstract

Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se${}^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se${}^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se${}^0$.

References in corpus (3)

• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Hyperfine Stark effect of shallow donors in silicon
• Single electron spin and its coherence in Si quantum computer architecture

Cited by in corpus (5)

• Characterization of the Si:Se+ spin-photon interface
• Optimizing surface defects for atomic-scale electronics: Si dangling bonds
• Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices
• Rydberg Entangling Gates in Silicon
• Qubit guidelines for solid-state spin defects