Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon

Abstract

We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric field due to strain in our samples. We show that in the presence of this strain, electric-field sources of decoherence can be non-negligible. Using our measured values for the Stark shift, we predict magnetic fields for which the spin-orbit Stark effect cancels the hyperfine Stark effect, suppressing decoherence from electric-field noise. We discuss the limitations of these noise-suppression points due to random distributions of strain and propose a method for overcoming them.

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Cited by in corpus (6)

• Electric field control of spins in molecular magnets
• Addressable electron spin resonance using donors and donor molecules in silicon
• Large Stark tuning of donor electron spin quantum bits in germanium
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves
• Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon