Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon

Abstract

This work reports the measurement of electron $g$ factor anisotropy ($|\Delta g|$ = $|g_{001}-g_{1\bar{1}0}|$) for phosphorous donor qubits in strained silicon (sSi = Si/Si${}_{1-x}$Ge${}_x$) environments. Multi-million-atom tight-binding simulations are performed to understand the measured decrease in $|\Delta g|$ as a function of $x$, which is attributed to a reduction in the interface-related anisotropy. For $x<$7\%, the variation in $|\Delta g|$ is linear and can be described by ${\eta }_{x}x$, where ${\eta }_x\approx$1.62$\times$ 10${}^{-3}$. At $x$=20\%, the measured $|\Delta g|$ is 1.2 $\pm$ 0.04 $\times$ 10${}^{-3}$, which is in good agreement with the computed value of 1$\times 10^{-3}$. When strain and electric fields are applied simultaneously, the strain effect is predicted to play a dominant role on $|\Delta g|$. Our results provide useful insights on spin properties of sSi:P for spin qubits, and more generally for devices in spintronics and valleytronics areas of research.

5 pages, 4 figures

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Cited by in corpus (3)

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• Strain effects in phosphorous bound exciton transitions in silicon