Phosphorus donors in highly strained silicon

Abstract

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si${}_{1-x}$Ge${}_x$ substrates with $x\le 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory (DFT) shows that the additional reduction is caused by the volume increase of the unit cell and a local relaxation of the Si ligands of the P donor.

12 pages, 3 figures

References in corpus (6)

• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Atomically precise placement of single dopants in Si
• Charge-based quantum computing using single donors in semiconductors
• Strain effects on silicon donor exchange: Quantum computer architecture considerations
• Electron Exchange Coupling for Single Donor Solid-State Qubits

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