149 citations · 327 across the 7 of their papers we have counts for
7 papers
Measurements and atomistic theory of electron factor anisotropy for phosphorus donors in strained silicon
M. Usman, H. Huebl, A. R. Stegner +3
This work reports the measurement of electron factor anisotropy ( = ) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}…
Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
Jinming Lu, Felix Hoehne, Andre R. Stegner +4
Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free ind…
Isotope effect on electron paramagnetic resonance of boron acceptors in silicon
A. R. Stegner, H. Tezuka, T. Andlauer +4
The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of…
Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon
H. Tezuka, A. R. Stegner, A. M. Tyryshkin +5
The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow…
Electrical detection of spin echoes for phosphorus donors in silicon
Hans Huebl, Felix Hoehne, Benno Grolik +3
The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor el…
Phosphorus donors in highly strained silicon
Hans Huebl, Andre R. Stegner, Martin Stutzmann +5
The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual SiGe substrates with is determined via electrically detected…