Electrical detection of 31P spin quantum states

Abstract

In recent years, a variety of solid-state qubits has been realized, including quantum dots, superconducting tunnel junctions and point defects. Due to its potential compatibility with existing microelectronics, the proposal by Kane based on phosphorus donors in Si has also been pursued intensively. A key issue of this concept is the readout of the P quantum state. While electrical measurements of magnetic resonance have been performed on single spins, the statistical nature of these experiments based on random telegraph noise measurements has impeded the readout of single spin states. In this letter, we demonstrate the measurement of the spin state of P donor electrons in silicon and the observation of Rabi flops by purely electric means, accomplished by coherent manipulation of spin-dependent charge carrier recombination between the P donor and paramagnetic localized states at the Si/SiO2 interface via pulsed electrically detected magnetic resonance. The electron spin information is shown to be coupled through the hyperfine interaction with the P nucleus, which demonstrates the feasibility of a recombination-based readout of nuclear spins.

References in corpus (11)

• Single-shot read-out of an individual electron spin in a quantum dot
• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Observation of coherent oscillation of a single nuclear spin and realization of a two-qubit conditional quantum gate
• Quantum oscillations in two coupled charge qubits
• Charge-based quantum computing using single donors in semiconductors
• Silicon-based Quantum Computation
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
• Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation
• The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects
• Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers

Cited by in corpus (71)

• Quantum Computing
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• High precision quantum control of single donor spins in silicon
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Quantum computing by optical control of electron spins
• Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Valley-based noise-resistant quantum computation using Si quantum dots
• Room Temperature Electrical Detection of Spin Coherence in C60
• Efficient electrical spin readout of NV- centers in diamond
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Hybrid solid state qubits: the powerful role of electron spins
• Quantum dot spin qubits in Silicon: Multivalley physics
• Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene
• Electrical detection of spin echoes for phosphorus donors in silicon
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Realizing singlet-triplet qubits in multivalley Si quantum dots
• Long spin coherence in silicon with an electrical spin trap readout
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon
• Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
• External field control of donor electron exchange at the Si/SiO2 interface
• Addressable electron spin resonance using donors and donor molecules in silicon
• Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
• Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Nuclear Spin Dynamics of Ionized Phosphorus Donors in Silicon
• Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR
• Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon
• Quantum non-demolition measurements of single donor spins in semiconductors
• Optimal quantum multi-parameter estimation and application to dipole- and exchange-coupled qubits
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
• Transport in a Single Self-Doped Nanocrystal
• Lock-in detection for pulsed electrically detected magnetic resonance
• Time Constants of Spin-Dependent Recombination Processes
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• A fabrication guide for planar silicon quantum dot heterostructures
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• Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
• Spin-dependent scattering in a silicon transistor
• Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• A Non-Demolition Single Spin Meter
• Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface
• Aperiodic dynamical decoupling sequences in presence of pulse errors
• Bipolar polaron pair recombination in P3HT/PCBM solar cells
• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Spin-dependent recombination involving oxygen-vacancy complexes in silicon
• Analytical description of spin-Rabi oscillation controlled electronic transitions rates between weakly coupled pairs of paramagnetic states with S=1/2
• The EDMR Microscope - Combining Conductive Atomic Force Microscopy with Electrically Detected Magnetic Resonance
• Single electron spin and its coherence in Si quantum computer architecture
• CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells
• Electrically detected magnetic resonance using radio-frequency reflectometry
• Spin-dependent recombination at arsenic donors in ion-implanted silicon
• Preparation of quantum states of two spin-$\frac{1}{2}$ particles in the form of the Schmidt decomposition
• Deterministic preparation of Dicke states of donor nuclear spins in silicon by cooperative pumping
• Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity
• Real Time Electrical Detection of Coherent Spin Oscillations
• Optical dependence of electrically-detected magnetic resonance in lightly-doped Si:P devices
• Quantum read-out and fast initialization of nuclear spin qubits with electric currents
• Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon
• Coupling optical and electrical gating for electronic read-out of quantum dot dynamics
• NMR study of optically hyperpolarized phosphorus donor nuclei in silicon
• Synthesis of thin silicon dioxide layers with high E' center densities and investigation of the E' center spin relaxation dynamics for single spin readout applications
• Electron nuclear double resonance with donor-bound excitons in silicon
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• Spin echo without an external permanent magnetic field
• Magnetic resonance and microwave resistance modulation in van der Waals colossal-magnetoresistance material