Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Abstract

Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons which fundamentally limits spin coherence times. Here we demonstrate electrical detection of phosphorus donor electron spin resonance by transport through a silicon device, using optically-driven donor-bound exciton transitions. We use this method to measure electron spin Rabi oscillations, and, by avoiding use of an ancillary spin for readout, we are able to obtain long intrinsic electron spin coherence times, limited only by the donor concentration. We go on to experimentally address critical issues for adopting this scheme for single spin measurement in silicon nanodevices, including the effects of strain, electric fields, and non-resonant excitation. This lays the foundations for realising a versatile readout method for single spin readout with relaxed magnetic field and temperature requirements compared with spin-dependent tunneling.

arXiv comment13 pages, 4 figures

References in corpus (15)

• High-sensitivity diamond magnetometer with nanoscale resolution
• A single-atom electron spin qubit in silicon
• Single-shot readout of an electron spin in silicon
• Electronic measurement and control of spin transport in Silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Solid state quantum memory using the 31P nuclear spin
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Optical addressing of an individual erbium ion in silicon
• Electrical detection of 31P spin quantum states
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon
• Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR
• Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
• Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon
• Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

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• Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
• Charge-insensitive single-atom spin-orbit qubit in silicon
• Quantum metrology with a single spin-$3/2$ defect in silicon carbide
• Strain-induced spin resonance shifts in silicon devices
• Quantum Computing with Acceptor Spins in Silicon
• ${}^{29}$Si nuclear spins as a resource for donor spin qubits in silicon
• Extending qubit coherence by adaptive quantum environment learning
• Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon
• Broadband Electrically Detected Magnetic Resonance Using Adiabatic Pulses
• Optical Control of Donor Spin Qubits in Silicon
• Qubit guidelines for solid-state spin defects
• Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity
• Optically Controlled Entangling Gates in Randomly Doped Silicon
• Electron nuclear double resonance with donor-bound excitons in silicon
• NMR study of optically hyperpolarized phosphorus donor nuclei in silicon
• Strain effects in phosphorous bound exciton transitions in silicon
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Strained Donor-Bound Excitons in ${}^{28}$Si