Strained Donor-Bound Excitons in ${}^{28}$Si

Abstract

We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D${}^0$$\to$D${}^0$X) in isotopically enriched ${}^{28}$Si, focusing on the group-V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential $\hat{I}{ž}_{\mathrm{u}}$ is found to be significantly larger than values reported for other states or transitions in silicon and shows a clear dependence on the donor species, indicating an increased sensitivity of the D${}^0$X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential $d$, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D${}^0$X transitions.