Charge-insensitive single-atom spin-orbit qubit in silicon

Abstract

High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, $10^5$ electrically mediated single-qubit and $10^4$ dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.

4 pages, 2 figures

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• Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• Recent advances in hole-spin qubits
• Engineering long spin coherence times of spin-orbit systems
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
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• Spin-orbit dynamics of single acceptor atoms in silicon
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
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• AlCl${}_3$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
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• Entanglement control and magic angles for acceptor qubits in Si
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Valley filtering and spatial maps of coupling between silicon donors and quantum dots
• A generalized Stoner criterion and versatile spin ordering in two-dimensional spin-orbit coupled electron systems
• Acceptor-induced bulk dielectric loss in superconducting circuits on silicon
• Spin-photon coupling for atomic qubit devices in silicon
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Hole-Spin-Echo Envelope Modulations
• Non-linear anomalous Hall effect of two-dimensional spin-3/2 heavy holes
• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• Quadrupolar interactions between acceptor pairs in p-doped semiconductors
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Engineering local strain for single-atom nuclear acoustic resonance in silicon
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Acceptor-based qubit in silicon with tunable strain
• Heitler-London model for acceptor-acceptor interactions in doped semiconductors
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Novel characterisation of dopant-based qubits
• Berry-phase induced entanglement of hole-spin qubits in a microwave cavity
• 2-dimensional semiconductors pave the way towards dopant based quantum computing