Berry-phase induced entanglement of hole-spin qubits in a microwave cavity
arXiv:2012.15804 · doi:10.1103/PhysRevB.104.L041402
Abstract
Hole-spins localized in semiconductor structures, such as quantum dots or defects, serve to the realization of efficient gate-tunable solid-state quantum bits. Here we study two electrically driven spin holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay between the non-Abelian Berry phases generated by local time-dependent electrical fields and the shared cavity photons allows for fast manipulation, detection, and long-range entanglement of the hole-spin qubits in the absence of any external magnetic field. Owing to its geometrical structure, such a scheme is more robust against external noises than the conventional hole-spin qubit implementations. These results suggest that hole-spins are favorable qubits for scalable quantum computing by purely electrical means.
4p + 9p of supplemental material
References in corpus (9)
- Driven coherent oscillations of a single electron spin in a quantum dot
- Solid state quantum memory using the 31P nuclear spin
- Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
- Spin relaxation and decoherence of holes in quantum dots
- Observation of extremely slow hole spin relaxation in self-assembled quantum dots
- Geometrical spin dephasing in quantum dots
- Geometric phases in semiconductor spin qubits: Manipulations and decoherence
- Dispersive readout of adiabatic phases
- Pseudospin-electric coupling for holes beyond the envelope-function approximation