Geometrical spin dephasing in quantum dots
arXiv:cond-mat/0603847 · doi:10.1103/PhysRevLett.97.076803
Abstract
We study spin-orbit mediated relaxation and dephasing of electron spins in quantum dots. We show that higher order contributions provide a relaxation mechanism that dominates for low magnetic fields and is of geometrical origin. In the low-field limit relaxation is dominated by coupling to electron-hole excitations and possibly noise rather than phonons.
Replaced with final published version
References in corpus (5)
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- Low- and high-frequency noise from coherent two-level systems
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Cited by in corpus (11)
- Experimental signature of phonon-mediated spin relaxation
- Geometric phases in semiconductor spin qubits: Manipulations and decoherence
- Measurement, control, and decay of quantum-dot spins
- Quantum versus classical hyperfine-induced dynamics in a quantum dot
- Effect of electron-electron interaction on the phonon-mediated spin relaxation in quantum dots
- Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach
- Triplet-singlet relaxation in semiconductor single and double quantum dots
- The rise and fall of quantum and classical correlations in open-system dynamics
- Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields
- Spin dephasing due to a random Berry phase
- Towards a dephasing diode: asymmetric and geometric dephasing