115 citations · 898 across the 30 of their papers we have counts for
32 papers
Gate Dispersive Charge Detection in Ge/SiGe Quantum Dots
M. R. Tanvir, E. Sajadi, M. Veldhorst +2
Spin qubits are an attractive platform for scalable quantum computation, and recently, laterally gated quantum dots (QDs) in Ge heterostructures have emerged as a leading implement…
Quantum Krylov Learning
Shunji Matsuura, Yoji Kawamura, Joseph Salfi +1
The Hamiltonian of a natural quantum system is usually determined indirectly, by proposing microscopic models and comparing their predicted observables with experiment. A more dire…
Krylov Break Times from an Inhomogeneous Lieb--Robinson Light Cone
Shunji Matsuura, Yoji Kawamura, Joseph Salfi +1
Krylov and Lanczos approximations are used in quantum dynamics, quantum subspace methods, and Hamiltonian learning. A practical question is how long an -dimensional Krylov trunc…
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
P. Daoust, N. Rotaru, D. Biswas +9
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing t…
Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
Abhikbrata Sarkar, Zhanning Wang, Mathew Rendell +9
In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit p…
Nonlinearity and Parametric Amplification of Superconducting Nanowire Resonators in Magnetic Field
M. Khalifa, J. Salfi
Nonlinear superconducting devices, typically based on Josephson Junction (JJ) nonlinearities, are the basis for superconducting quantum electronics, enabling, e.g., the formation o…
Towards computer-assisted design of hole spin qubits in quantum dot devices
A Ciocoiu, M Khalifa, J Salfi
The design of scalable quantum computers will benefit from predictive models for qubit performance that consider the design and layout of the qubit devices. This approach, has rece…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Novel characterisation of dopant-based qubits
B. Voisin, J. Salfi, R. Rahman +1
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building…
Valley interference and spin exchange at the atomic scale in silicon
B. Voisin, J. Bocquel, A. Tankasala +6
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…
Roadmap for gallium arsenide spin qubits
Ferdinand Kuemmeth, Hendrik Bluhm
Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable elect…
Single Atom Qubits: Acceptors
J Salfi
Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the…
Scanned single-electron probe inside a silicon electronic device
Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson +3
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable…
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
Zhanning Wang, Elizabeth Marcellina, A. R. Hamilton +4
Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is…
Hole-Spin-Echo Envelope Modulations
Pericles Philippopoulos, Stefano Chesi, Joe Salfi +2
Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proxi…
Certification of spin-based quantum simulators
Abolfazl Bayat, Benoit Voisin, Gilles Buchs +3
Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator…
Engineering long spin coherence times of spin-orbit systems
T. Kobayashi, J. Salfi, J. van der Heijden +12
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photo…
Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
M. Usman, B. Voisin, J. Salfi +2
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
J. Salfi, B. Voisin, A. Tankasala +6
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the…
Entanglement control and magic angles for acceptor qubits in Si
J. C. Abadillo-Uriel, Joe Salfi, Xuedong Hu +3
Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrical…
Spin-orbit dynamics of single acceptor atoms in silicon
J. van der Heijden, T. Kobayashi, M. G. House +5
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of…
Quantum Computing with Acceptor Spins in Silicon
Joe Salfi, Mengyang Tong, Sven Rogge +1
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of…
Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
Muhammad Usman, Juanita Bocquel, Joe Salfi +6
The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…
Donor Wavefunctions in Si Gauged by STM Images
A. L. Saraiva, J. Salfi, J. Bocquel +5
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunc…