31 citations · 45 across the 6 of their papers we have counts for
11 papers
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Novel characterisation of dopant-based qubits
B. Voisin, J. Salfi, R. Rahman +1
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building…
Valley interference and spin exchange at the atomic scale in silicon
B. Voisin, J. Bocquel, A. Tankasala +6
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…
Single Atom Qubits: Acceptors
J Salfi
Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the…
Scanned single-electron probe inside a silicon electronic device
Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson +3
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable…
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
Zhanning Wang, Elizabeth Marcellina, A. R. Hamilton +4
Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is…