115 citations · 898 across the 30 of their papers we have counts for
5 papers · 1 filter
Donor Wavefunctions in Si Gauged by STM Images
A. L. Saraiva, J. Salfi, J. Bocquel +5
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunc…
Charge-insensitive single-atom spin-orbit qubit in silicon
J. Salfi, J. A. Mol, Dimitrie Culcer +1
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglemen…
Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden…
Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
J. A. Mol, J. Salfi, R. Rahman +5
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at c…
Spatially resolved resonant tunneling on single atoms in silicon
B. Voisin, J. Salfi, J. Bocquel +2
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the…