Hole-Spin-Echo Envelope Modulations

Abstract

Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it can be difficult to measure. However, an anisotropic hyperfine coupling can give rise to a substantial spin-echo envelope modulation that can be Fourier-analyzed to accurately reveal the hyperfine tensor. Here, we give a general theoretical analysis for hole-spin-echo envelope modulation (HSEEM), and apply this analysis to the specific case of a boron-acceptor hole spin in silicon. For boron acceptor spins in unstrained silicon, both the hyperfine and Zeeman Hamiltonians are approximately isotropic leading to negligible envelope modulations. In contrast, in strained silicon, where light-hole spin qubits can be energetically isolated, we find the hyperfine Hamiltonian and $g$-tensor are sufficiently anisotropic to give spin-echo-envelope modulations. We show that there is an optimal magnetic-field orientation that maximizes the visibility of envelope modulations in this case. Based on microscopic estimates of the hyperfine coupling, we find that the maximum modulation depth can be substantial, reaching $\sim 10\%$, at a moderate laboratory magnetic field, $B\lesssim 200\mathrm{mT}$.

arXiv comment10 pages, 1 figure; v2: minor revisions/clarifications to address referee comments

References in corpus (17)

• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Electron spin decoherence of single Nitrogen-Vacancy defects in diamond
• Nuclear Spins in Nanostructures
• Universal Control of Nuclear Spins Via Anisotropic Hyperfine Interactions
• Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon
• Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots
• Decoherence induced by anisotropic hyperfine interaction in Si spin qubits
• Charge-insensitive single-atom spin-orbit qubit in silicon
• Hyperfine Stark effect of shallow donors in silicon
• Spin-orbit dynamics of single acceptor atoms in silicon
• Strong Hyperfine-Induced Modulation of an Optically-Driven Hole Spin in an InAs Quantum Dot
• Spin-echo dynamics of a heavy hole in a quantum dot
• Non-ideality of quantum operations with the electron spin of a 31P donor in a Si crystal due to interaction with a nuclear spin system
• Isotope effect on electron paramagnetic resonance of boron acceptors in silicon
• Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
• Entanglement control and magic angles for acceptor qubits in Si
• Maximizing the purity of a qubit evolving in an anisotropic environment

Cited by in corpus (5)

• Recent advances in hole-spin qubits
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• Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots