Spin Density Matrix of Spin-3/2 Hole Systems

Abstract

For hole systems with an effective spin j=3/2, we present an invariant decomposition of the spin density matrix that can be interpreted as a multipole expansion. The charge density corresponds to the monopole moment and the spin polarization due to a magnetic field corresponds to a dipole moment while heavy hole-light hole splitting can be interpreted as a quadrupole moment. For quasi two-dimensional hole systems in the presence of an in-plane magnetic field B the spin polarization is a higher-order effect that is typically much smaller than one even if the minority spin subband is completely depopulated. On the other hand, the field B can induce a substantial octupole moment which is a unique feature of j=3/2 hole systems.

8 pages, 1 figure, 3 tables

References in corpus (11)

• Metal-insulator transition in two-dimensional electron systems
• Spin Degree of Freedom in a Two-Dimensional Electron Liquid
• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
• Spin polarization and g-factor of a dilute GaAs two-dimensional electron system
• Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
• Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields
• Anisotropic magnetoresistance of GaAs two-dimensional holes
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Persistent Currents in Small, Imperfect Hubbard Rings

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• Charge-insensitive single-atom spin-orbit qubit in silicon
• Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems
• Spin precession and alternating spin polarization in spin-3/2 hole systems
• Large variations in the hole spin splitting of quantum-wire subband edges
• Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Spin polarization decay in spin-1/2 and spin-3/2 systems
• Current-induced Spin Polarization in Two-Dimensional Hole Gas
• Lande-like formula for the g factors of hole-nanowire subband edges
• Pseudospin-electric coupling for holes beyond the envelope-function approximation
• Tailoring hole spin splitting and polarization in nanowires
• Surface states, Friedel oscillations, and spin accumulation in p-doped semiconductors
• Carrier-density-controlled anisotropic spin susceptibility of two-dimensional hole systems
• Acceptor-based qubit in silicon with tunable strain
• Quadrupolar photovoltaic effect in the terahertz range in a two-dimensional spin-3/2 hole system
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Beyond spin-1/2: Multipolar spin-orbit coupling in noncentrosymmetric crystals with time-reversal symmetry