Tailoring hole spin splitting and polarization in nanowires

Abstract

Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical study presented here, which has mapped the range of spin-orbit coupling strengths realized in typical semiconductors. Large controllable variations of the g-factor with associated characteristic spin polarization are shown to exist for nanowire subband edges, which therefore turn out to be a versatile laboratory for investigating the complex spin properties exhibited by quantum-confined holes.

3.1 pages, 4 figures, RevTex4, to appear in APL

References in corpus (8)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Highly anisotropic g-factor of two-dimensional hole systems
• Zeeman splitting in ballistic hole quantum wires
• Ballistic transport in induced one-dimensional hole systems
• Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems
• Spin Density Matrix of Spin-3/2 Hole Systems
• Large variations in the hole spin splitting of quantum-wire subband edges
• Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge

Cited by in corpus (8)

• Spin dynamics in semiconductors
• Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
• Lande-like formula for the g factors of hole-nanowire subband edges
• Hole spin relaxation in $p$-type GaAs quantum wires
• g-Factor anisotropy of hole quantum wires induced by the Rashba interaction
• Asymmetric $g$ tensor in low-symmetry two-dimensional hole systems
• Electron spin relaxation in n-type InAs quantum wires
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices