Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

Abstract

We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between different subbands. We elucidate the interplay between quantum confinement and heavy-hole - light-hole mixing and identify a certain robustness displayed by low-lying hole-wire subband edges with respect to changes in the shape or strength of the wire potential. The ability to address individual subband edges in, e.g., transport or optical experiments enables the study of holes states with nonstandard spin polarization, which do not exist in spin-1/2 systems. Changing the aspect ratio of hole wires with rectangular cross-section turns out to strongly affect the g factor of subband edges, providing an opportunity for versatile in-situ tuning of hole-spin properties with possible application in spintronics. The relative importance of cubic crystal symmetry is discussed, as well as the spin splitting away from zone-center subband edges.

16 pages, 12 figures, RevTex

References in corpus (8)

• Zeeman splitting in ballistic hole quantum wires
• Ballistic transport in induced one-dimensional hole systems
• Spin Density Matrix of Spin-3/2 Hole Systems
• Large variations in the hole spin splitting of quantum-wire subband edges
• Anisotropic modification of the effective hole $g$-factor by electrostatic confinement
• Lande-like formula for the g factors of hole-nanowire subband edges
• Tailoring hole spin splitting and polarization in nanowires
• Hole transport in p-type GaAs quantum dots and point contacts

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