paper

Electron, hole and exciton effective g-factors in semiconductor nanocrystals

arXiv:2011.11041

Abstract

We review the existing and present the new results of calculations of the electron, hole, and exciton effective -factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for calculation of electron -factor size dependence in bare nanocrystals within the eight-band Kane model. Using the spherical approximation for Luttinger Hamiltonian we find the dependence of hole -factor on light to heavy hole effective mass ratio in semiconductor nanostructures with spherical, axial, and cubically symmetric shape. We show that the non-equidistant Zeeman splitting of the four-fold degenerate hole state may take place in cube and spheroidal nanocrystals. We present a comparison of the calculated hole -factors in nanostructures based on II-VI and III-V semiconductors for different sets of the Luttinger parameters and analyze the main effects contributing to the -factor renormalization with the respect to the bulk value. We discuss different approaches to the definition of the hole and exciton -factors which should be taken into account during the analysis of the experimental data and compare our results of -factor calculations with the experimental data for semiconductor spherical nanocrystals and thin nanoplatelets available in the literature.

References in corpus (8)