Strain in Semiconductor Core-Shell Nanowires
arXiv:1006.0391 · doi:10.1063/1.3207838
Abstract
We compute strain distributions in core-shell nanowires of zinc blende structure. We use both continuum elasticity theory and an atomistic model, and consider both finite and infinite wires. The atomistic valence force-field (VFF) model has only few assumptions. But it is less computationally efficient than the finite-element (FEM) continuum elasticity model. The generic properties of the strain distributions in core-shell nanowires obtained based on the two models agree well. This agreement indicates that although the calculations based on the VFF model are computationally feasible in many cases, the continuum elasticity theory suffices to describe the strain distributions in large core-shell nanowire structures. We find that the obtained strain distributions for infinite wires are excellent approximations to the strain distributions in finite wires, except in the regions close to the ends. Thus, our most computationally efficient model, the finite-element continuum elasticity model developed for infinite wires, is sufficient, unless edge effects are important. We give a comprehensive discussion of strain profiles. We find that the hydrostatic strain in the core is dominated by the axial strain-component, $\varepsilon_{\z \z}$. We also find that although the individual strain components have a complex structure, the hydrostatic strain shows a much simpler structure. All in-plane strain components are of similar magnitude. The non-planar off-diagonal strain-components ($\varepsilon_{\x \z}$ and $\varepsilon_{\y \z}$) are small but nonvanishing. Thus the material is not only stretched and compressed but also warped. The models used can be extended for study of wurtzite nanowire structures, as well as nanowires with multiple shells.
References in corpus (4)
- Comparison of two methods for describing the strain profiles in quantum dots
- Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
- Strain distributions in lattice-mismatched semiconductor core-shell nanowires
- Lande-like formula for the g factors of hole-nanowire subband edges
Cited by in corpus (15)
- Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
- Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires
- Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
- Strain in crystalline core-shell nanowires
- Raman spectroscopy and strain mapping in individual Ge-SixGe1-x core-shell nanowires
- Hole spin qubits in thin curved quantum wells
- Acoustic phonons and strain in core/shell nanowires
- Strain Influence on Optical Absorption of Giant Semiconductor Colloidal Quantum Dots
- Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires
- Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
- Systematic strain-induced bandgap tuning in binary III-V semiconductors from density functional theory
- Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
- Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors
- In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires
- Machine learning for accelerated bandgap prediction in strain-engineered quaternary III-V semiconductors