Strain in crystalline core-shell nanowires
arXiv:1403.3826 · doi:10.1051/epjap/2014140156
Abstract
The strain configuration induced by the lattice mismatch in a core-shell nanowire is calculated analytically, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. The method is applied to nanowires with the wurtzite structure or the zinc-blende structure with the hexagonal / trigonal axis along the nanowire, and the results are compared to available numerical calculations and experimental data. It is also applied to multishell nanowires, and to core-shell nanowires grown along the axis of cubic semiconductors.
References in corpus (4)
- Strain in Semiconductor Core-Shell Nanowires
- Synchrotron X-ray study of polycrystalline wurtzite Zn1-xMgxO (0 <= x <= 0.15): Evolution of crystal structure and polarization
- Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
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- Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
- The generalized plane piezoelectric problem: Theoretical formulation and application to heterostructure nanowires
- Residual strain in free-standing CdTe nanowires overgrown with HgTe
- Deterministic radiative coupling between plasmonic nanoantennas and semiconducting nanowire quantum dots
- Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires
- Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires