Ballistic transport in induced one-dimensional hole systems

Abstract

We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.

6 pages, 4 figures (accepted to Applied Physics Letters)

References in corpus (5)

• Metallic behavior and related phenomena in two dimensions
• Possible Spin Polarization in a One-Dimensional Electron Gas
• Many-body spin related phenomena in ultra-low-disorder quantum wires
• Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems
• Single-hole transistor in p-type GaAs/AlGaAs heterostructures

Cited by in corpus (28)

• Spin dynamics in semiconductors
• Wigner crystal physics in quantum wires
• What lurks below the last plateau: Experimental studies of the 0.7 x 2e^2/h conductance anomaly in one-dimensional systems
• Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
• Spin coupling in zigzag Wigner crystals
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires
• Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures
• Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
• Fabrication and characterization of an induced GaAs single hole transistor
• Evidence for localization and 0.7 anomaly in hole quantum point contacts
• AlGaAs/GaAs single electron transistors fabricated without modulation doping
• Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires
• Lande-like formula for the g factors of hole-nanowire subband edges
• Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures
• The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
• Fractional quantization of ballistic conductance in 1D hole systems
• Hole spin relaxation in $p$-type GaAs quantum wires
• Tailoring hole spin splitting and polarization in nanowires
• g-Factor anisotropy of hole quantum wires induced by the Rashba interaction
• Nanostructures in p-GaAs with improved tunability
• Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
• Field-effect-induced two-dimensional electron gas utilizing modulation doping for improved ohmic contacts
• Electron spin relaxation in n-type InAs quantum wires
• A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor
• Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
• Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes
• Fractional quantum conductance staircase of edge hole channels in silicon quantum wells