Nanostructures in p-GaAs with improved tunability

Abstract

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.

4 pages, 4 figures

References in corpus (9)

• Electron spin decoherence in quantum dots due to interaction with nuclei
• Spin relaxation and decoherence of holes in quantum dots
• Spontaneous spin polarization in quantum point contacts
• Aharonov-Bohm oscillations in the presence of strong spin-orbit interactions
• Ballistic transport in induced one-dimensional hole systems
• Single-hole transistor in p-type GaAs/AlGaAs heterostructures
• 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires
• Observation of excited states in a p-type GaAs quantum dot
• High-quality quantum point contact in two-dimensional GaAs (311)A hole system

Cited by in corpus (7)

• What lurks below the last plateau: Experimental studies of the 0.7 x 2e^2/h conductance anomaly in one-dimensional systems
• Hybridization and spin decoherence in heavy-hole quantum dots
• The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
• Anisotropic Zeeman splitting in p-type GaAs quantum point contacts
• Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties
• Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes
• Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot