High-quality quantum point contact in two-dimensional GaAs (311)A hole system

Abstract

We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality, GaAs (311)A two-dimensional (2D) hole system using shallow etching and top-gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate-voltage), the source-drain data, and the negative magneto-resistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.

References in corpus (5)

• Bias and temperature dependence of the 0.7 conductance anomaly in Quantum Point Contacts
• Quantized conductance in an AlAs 2D electron system quantum point contact
• Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems
• 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires
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Cited by in corpus (4)

• Evidence for localization and 0.7 anomaly in hole quantum point contacts
• Nanostructures in p-GaAs with improved tunability
• Tuning spin orbit interaction in high quality gate-defined InAs one-dimensional channels
• Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes