Observation of excited states in a p-type GaAs quantum dot

Abstract

A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at T_hole = 185 mK. The charging energies as large as 2 meV evaluated from Coulomb diamond measurements together with the well resolved single-hole excited state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.

arXiv comment5 pages, 5 figures

References in corpus (8)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Manipulation of a single charge in a double quantum dot
• Spin relaxation and decoherence of holes in quantum dots
• Measurements of Kondo and spin splitting in single-electron transistors
• Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption
• Single-hole transistor in p-type GaAs/AlGaAs heterostructures
• Magnetotransport in C-doped AlGaAs heterostructures

Cited by in corpus (7)

• Hybridization and spin decoherence in heavy-hole quantum dots
• Spin interactions, relaxation and decoherence in quantum dots
• Kondo-based Qubits for Topological Quantum Computation
• Fabrication and characterization of an induced GaAs single hole transistor
• Evidence for localization and 0.7 anomaly in hole quantum point contacts
• Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum
• Nanostructures in p-GaAs with improved tunability