Magnetotransport in C-doped AlGaAs heterostructures
arXiv:cond-mat/0406417 · doi:10.1063/1.1781750
Abstract
High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic fields. This allows us to determine the densities, effective masses and mobilities of the holes populating the spin-split subbands arising from the lack of inversion symmetry in these structures.
3 pages, 4 figures
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Cited by in corpus (16)
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- High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates
- Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases
- Single-hole transistor in p-type GaAs/AlGaAs heterostructures
- Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
- Evidence for localization and 0.7 anomaly in hole quantum point contacts
- Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice
- Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
- Observation of excited states in a p-type GaAs quantum dot
- Static polarizability of two-dimensional hole gases
- Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs
- Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings
- Rashba-coupling modelling for two-dimensional and high-order Rashba Hamiltonian for one-dimensional confined heavy holes
- Dresselhaus spin-orbit interaction in the p-AlGaAs/GaAs/AlGaAs structure with a square quantum well: Surface Acoustic Waves Study
- Composite Fermion States around 2D Hole Landau Level Filling Factor 3/2 in Tilted Magnetic Fields
- Hysteretic magnetotransport in p-type AlGaAs heterostructures with In/Zn/Au ohmic contacts