Fabrication and characterization of an induced GaAs single hole transistor
arXiv:1002.2998 · doi:10.1063/1.3336011
Abstract
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.
accepted for publication in Applied Physics Letters
References in corpus (8)
- Single-shot read-out of an individual electron spin in a quantum dot
- Driven coherent oscillations of a single electron spin in a quantum dot
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices
- Ballistic transport in induced one-dimensional hole systems
- Large variations in the hole spin splitting of quantum-wire subband edges
- Observation of excited states in a p-type GaAs quantum dot
- Radio-frequency reflectometry on large gated 2-dimensional systems
Cited by in corpus (14)
- What lurks below the last plateau: Experimental studies of the 0.7 x 2e^2/h conductance anomaly in one-dimensional systems
- Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
- Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
- Hybridization and spin decoherence in heavy-hole quantum dots
- Recent advances in hole-spin qubits
- Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
- Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
- Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
- Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum
- Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas
- The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
- Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
- Towards low-dimensional hole systems in Be-doped GaAs nanowires
- G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors