G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors
arXiv:1508.06030 · doi:10.1140/epjb/e2016-60894-y
Abstract
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound states.
10 pages, 5 figures