Anisotropic Zeeman splitting in p-type GaAs quantum point contacts
arXiv:1301.3992 · doi:10.1209/0295-5075/102/37002
Abstract
Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.
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Cited by in corpus (8)
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- Detection and control of spin-orbit interactions in a GaAs hole quantum point contact
- Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts
- Magnetic Field Inducing Zeeman Splitting and Anomalous Conductance Reduction of Half-integer Quantized Plateaus in InAs Quantum Wires
- Asymmetric tensor in low-symmetry two-dimensional hole systems
- G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors