Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure

Abstract

The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.2 for heavy holes.

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References in corpus (6)

• Zeeman splitting in ballistic hole quantum wires
• Spin coherence of holes in GaAs/AlGaAs quantum wells
• Large variations in the hole spin splitting of quantum-wire subband edges
• 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires
• Anisotropic modification of the effective hole $g$-factor by electrostatic confinement
• Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires

Cited by in corpus (16)

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• Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases
• Dimensional reduction of the Luttinger Hamiltonian and g-factors of holes in symmetric two-dimensional semiconductor heterostructures
• Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact
• Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly
• Generation and Detection of Spin Currents in Semiconductor Nanostructures with Strong Spin-Orbit Interaction
• Detection and control of spin-orbit interactions in a GaAs hole quantum point contact
• Electrical control of the sign of the g-factor in a GaAs hole quantum point contact
• Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
• Anisotropic Zeeman splitting in p-type GaAs quantum point contacts
• The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
• Exporting superconductivity across the gap: Proximity effect for semiconductor valence-band states due to contact with a simple-metal superconductor
• Towards low-dimensional hole systems in Be-doped GaAs nanowires
• Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure
• Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot