Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Abstract

Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a $GaAs/A{\mathrm{l}}_{\mathrm{x}}\mathrm{G}{\mathrm{a}}_{1-\mathrm{x}}\mathrm{As}$ heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.

This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b03752, Nano Letters, published online 24 Nov, 2016

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