Charge-noise induced dephasing in silicon hole-spin qubits
arXiv:2201.06181 · doi:10.1103/PhysRevLett.129.247701
Abstract
We investigate theoretically charge-noise induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet-spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet-spots is boosted by several orders of magnitude, up to order of milliseconds.
arXiv comment9 pages, 6 figures
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