Voltage tunability of single spin-states in a quantum dot

Abstract

Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid-state. We demonstrate voltage tunability of the spin energy levels in a single quantum dot by modifying how spins sense magnetic field. We find the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.

7 pages, 4 figures, including supplementary information

References in corpus (7)

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