Voltage tunability of single spin-states in a quantum dot

Abstract

Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid-state. We demonstrate voltage tunability of the spin energy levels in a single quantum dot by modifying how spins sense magnetic field. We find the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.

7 pages, 4 figures, including supplementary information

References in corpus (13)

• Quantum Computation with Quantum Dots
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• A photonic cluster state machine gun
• Coherent control and suppressed nuclear feedback of a single quantum dot hole qubit
• Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
• Electrically tunable g-factors in quantum dot molecular spin states
• Lande g-tensor in semiconductor nanostructures
• Indistinguishable photons from a diode
• Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
• Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching
• Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field
• Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
• Probing spin relaxation in an individual InGaAs quantum dot using a single electron optical spin memory device

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• Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots
• Energy-Tunable Quantum Dot with Minimal Fine Structure Created by Using Simultaneous Electric and Magnetic Fields
• Charge-noise induced dephasing in silicon hole-spin qubits
• Photon phase shift at the few-photon level and optical switching by a quantum dot in a microcavity
• Electrical control of the sign of the g-factor in a GaAs hole quantum point contact
• Anisotropic g factor in InAs self-assembled quantum dots
• Entanglement control and magic angles for acceptor qubits in Si
• Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires
• Voltage tunable quantum dot array by patterned Ge-nanowire based metal-oxide-semiconductor (MOS) devices
• Voltage control of electron-nuclear spin correlation time in a single quantum dot
• Electron and hole g tensors of neutral and charged excitons in single quantum dots by high-resolution photocurrent spectroscopy
• Topology driven g-factor tuning in type-II quantum dots
• Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths
• Anisotropy of in-plane hole g-factor in CdTe/ZnTe quantum dots
• Cloaking the magnons
• Resonant two-laser spin-state spectroscopy of a negatively charged quantum dot-microcavity system with a cold permanent magnet
• Polarization correlated photons from a positively charged quantum dot
• The impact of hole $g$-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
• On-chip resonantly-driven quantum emitter with enhanced coherence