Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths

Abstract

We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and $g$-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in the diamagnetic coefficient when rotating the magnetic field from Faraday to Voigt geometry due to the unique dot morphology. The complete spectroscopic characterization of the fundamental properties of long-wavelength dot-in-a-well structures provides insight for the applicability of quantum technologies based on quantum dots emitting at telecom wavelengths.

arXiv comment14 pages, 4 figures

References in corpus (18)

• Detecting Single Infrared Photons with 93% System Efficiency
• On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar
• Generation of heralded entanglement between distant hole spins
• Enhanced photon-extraction efficiency from deterministic quantum-dot microlenses
• Improved fidelity of triggered entangled photons from single quantum dots
• Electric-field-induced coherent coupling of the exciton states in a single quantum dot
• Coulomb interactions in single, charged self-assembled quantum dots: radiative lifetime and recombination energy
• Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um
• Voltage tunability of single spin-states in a quantum dot
• Measurement of g-factor tensor in a quantum dot and disentanglement of exciton spins
• Size dependent exciton g-factor in self-assembled InAs/InP quantum dots
• Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
• Single quantum dot spectroscopy using a fiber taper waveguide near-field optic
• Exciton fine-structure splitting of telecom wavelength single quantum dots: statistics and external strain tuning
• From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots
• Anisotropic g factor in InAs self-assembled quantum dots
• Laser spectroscopy of individual quantum dots charged with a single hole
• Interference with a Quantum Dot Single-Photon Source and a Laser at Telecom Wavelength

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• Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
• Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study
• Spin properties in droplet epitaxy-grown telecom quantum dots
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots