Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

Abstract

We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In${}_{0.53}$Al${}_{0.24}$Ga${}_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$\mu$m by pump-probe Faraday rotation spectroscopy. Electron spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a sub-microsecond longitudinal electron spin relaxation time $T_1$ which unexpectedly strongly depends on temperature. At high temperatures the electron spin relaxation time is limited by optical phonon scattering through spin-orbit interaction decreasing down to $0.1$~ns at 260~K. We show that the hole spin relaxation is activated much more effectively by a temperature increase compared to the electrons.

7 pages, 3 figures

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Cited by in corpus (5)

• Coherent spin dynamics of electrons and holes in CsPbBr${}_3$ perovskite crystals
• Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
• Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect
• Spin properties in droplet epitaxy-grown telecom quantum dots
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots