Spin Inertia of Resident and Photoexcited Carriers in Singly-Charged Quantum Dots

Abstract

The spin dynamics in a broad range of systems can be studied using circularly polarized optical excitation with alternating helicity. The dependence of spin polarization on the frequency of helicity alternation, known as the spin inertia effect, is used here to study the spin dynamics in singly-charged (In,Ga)As/GaAs quantum dots (QDs) providing insight into spin generation and accumulation processes. We demonstrate that the dependence of spin polarization in $n$- and $p$-type QDs on the external magnetic field has a characteristic V- and M-like shape, respectively. This difference is related to different microscopic mechanisms of resident carriers spin orientation. It allows us to determine the parameters of the spin dynamics both for the ground and excited states of singly-charged QDs.

arXiv comment5 pages, 3 figures. This is a joint submission with "Theory of spin inertia in singly-charged quantum dots" by the same authors

References in corpus (14)

• Quantum Computation with Quantum Dots
• Quantum Computing
• Electron spin relaxation by nuclei in semiconductor quantum dots
• Nuclear spin physics in quantum dots: an optical investigation
• Observation of extremely slow hole spin relaxation in self-assembled quantum dots
• Intrinsic spin fluctuations reveal the dynamical response function of holes coupled to nuclear spin baths in (In,Ga)As quantum dots
• Tailored quantum dots for entangled photon pair creation
• Longitudinal and transversal spin dynamics of donor-bound electrons in fluorine-doped ZnSe: spin inertia versus Hanle effect
• Influcence of the nuclear electric quadrupolar interaction on the coherence time of hole- and electron-spins confined in semiconductor quantum dots
• Spin noise of electrons and holes in (In,Ga)As quantum dots: experiment and theory
• Theory of spin inertia in singly-charged quantum dots
• Spin noise of localized electrons: Interplay of hopping and hyperfine interaction
• Long-lived electron spins in a modulation doped (100) GaAs quantum well
• Optical Spin Initialization and Non-Destructive Measurement in a Quantum Dot Molecule

Cited by in corpus (20)

• Spin polarization recovery and Hanle effect for charge carriers interacting with nuclear spins in semiconductors
• Theory of spin inertia in singly-charged quantum dots
• Dynamic polarization of electron spins interacting with nuclei in semiconductor nanostructures
• Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation
• Spin inertia and polarization recovery in quantum dots: Role of pumping strength and resonant spin amplification
• Bath-induced spin inertia
• Interplay of spin mode locking and nuclei-induced frequency focusing in quantum dots
• Dynamic polarization of electron spins in indirect band gap (In,Al)As/AlAs quantum dots in weak magnetic field: experiment and theory
• Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
• Optical measurement of electron spins in quantum dots: Quantum Zeno effects
• Selective measurement of the longitudinal electron spin relaxation time $T_1$ of Ce${}^{3+}$ ions in a YAG lattice: Resonant spin inertia
• Nuclear magnetic resonance spectroscopy of nonequilibrium steady states in quantum dots
• Tuning the nuclei-induced spin relaxation of localized electrons by the quantum Zeno and anti-Zeno effects
• Hidden anisotropy controls spin-photon entanglement in a charged quantum dot
• Resonant spin amplification in Faraday geometry
• Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
• Nuclear spin dynamics influenced and detected by electron spin polarization in CdTe/CdMgTe quantum wells
• Simulation of nonequilibrium spin dynamics in quantum dots subjected to periodic laser pulses
• Spin properties in droplet epitaxy-grown telecom quantum dots
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots