Dynamic polarization of electron spins in indirect band gap (In,Al)As/AlAs quantum dots in weak magnetic field: experiment and theory

Abstract

A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $125$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of a few millitesla. In this paper we demonstrate experimentally and theoretically that the dynamic electron spin polarization degree changes sign as a function of time, strength of the applied magnetic field and its direction. The studies are performed on indirect band-gap (In,Al)As/AlAs quantum dots and their results are explained in the framework of a theoretical model developed for our experimental setting.

14 pages, 16 figures

References in corpus (7)

• Spin-flip Raman scattering of the $\Gamma$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots
• Spin polarization recovery and Hanle effect for charge carriers interacting with nuclear spins in semiconductors
• Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
• Dynamic polarization of electron spins interacting with nuclei in semiconductor nanostructures
• Nuclear magnetic resonance and nuclear spin relaxation in AlAs quantum well probed by ESR
• Exciton spin decay modified by strong electron-hole exchange interaction
• Nuclear spin dynamics, noise, squeezing and entanglement in box model

Cited by in corpus (2)

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• Dynamic spin polarization in organic semiconductors with intermolecular exchange interaction