Spin-flip Raman scattering of the -X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots
arXiv:1406.2684 · doi:10.1103/PhysRevB.90.125431
Abstract
The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the - and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of -X-valley mixing, as evidenced by both experiment and theory.
arXiv comment5 pages, 3 figures
References in corpus (7)
- Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
- Manipulation of the Spontaneous Emission Dynamics of Quantum Dots in 2D Photonic Crystals
- Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells
- Exciton spin relaxation in single semiconductor quantum dots
- Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap
- Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well
- Spin splitting of X-related donor impurity states in an AlAs barrier
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- Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices
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