Spin-flip Raman scattering of the $\Gamma$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots

Abstract

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $\Gamma$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $\Gamma$-X-valley mixing, as evidenced by both experiment and theory.

5 pages, 3 figures

References in corpus (2)

• Manipulation of the Spontaneous Emission Dynamics of Quantum Dots in 2D Photonic Crystals
• Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells

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• Dynamic polarization of electron spins in indirect band gap (In,Al)As/AlAs quantum dots in weak magnetic field: experiment and theory
• Unraveling spin dynamics from charge fluctuations
• Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices
• Direct high resolution resonant Raman scattering measurements of InAs quantum dot dynamic nuclear spin polarization states
• Extending Qubit Coherence Time via Hybrid Dynamical Decoupling