Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

Abstract

We report measurements of the longitudinal and transverse spin relaxation times of holes in an ensemble of self-assembled InAs/InAlGaAs quantum dots (QDs), emitting in the telecom spectral range. The spin coherence of a single carrier is determined using spin mode-locking in the inhomogeneous ensemble of QDs. Modeling the signal allows us to extract the hole spin coherence time to be in the range of T${}_2=0.02-0.4$ $\mu$s. The longitudinal spin relaxation time T${}_1=0.5$ $\mu$s is measured using the spin inertia method.

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Cited by in corpus (3)

• Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect
• Spin properties in droplet epitaxy-grown telecom quantum dots
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots