InP-based single-photon sources operating at telecom C-band with increased extraction efficiency
arXiv:2102.00450 · doi:10.1063/5.0045997
Abstract
In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5x108 cm-2 to ~2x109 cm-2 and symmetric shape of these nanostructures together with spectral range of emission makes them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1As layers and cylindrical photonic confinement structures. Realization of such technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3+/-2)% into 0.4 numerical aperture detection optics at approx. 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.
arXiv comment18 pages, 3 figures
References in corpus (17)
- Quantum Communication
- Near optimal single photon sources in the solid state
- On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar
- Enhanced photon-extraction efficiency from deterministic quantum-dot microlenses
- On-demand generation of background--free single photons from a solid-state source
- Strain-Tunable GaAs Quantum dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand
- Highly indistinguishable on-demand resonance fluorescence photons from a deterministic quantum dot micropillar device with 75 extraction efficiency
- A quantum light emitting diode for the standard telecom window around 1550 nm
- Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling
- Overcoming power broadening of the quantum dot emission in a pure wurtzite nanowire
- Quantum teleportation using highly coherent emission from telecom C-band quantum dots
- Excitation mechanisms of individual CdTe/ZnTe quantum dots studied by photon correlation spectroscopy
- Biexciton recombination rates in self-assembled quantum dots
- Numerical optimization of the extraction efficiency of a quantum-dot based single-photon emitter into a single-mode fiber
- Telecom wavelength single quantum dots with very small excitonic fine-structure splitting
- Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots
- Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths
Cited by in corpus (10)
- Quantum dots for photonic quantum information technology
- Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
- On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
- Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures
- Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
- Efficient, indistinguishable telecom C-band photons using a tapered nanobeam
- Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
- Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
- Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect
- Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band